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Synthetic Diamond: New Frontier in Power Electronics. Why Nanometer-Scale Metrology is Critical to Avoid Growth Defects

Blog Post

Friday, July 25, 2025

Synthetic diamond is shaping the future of renewable energy and power electronics.
This sentence perfectly sums up the importance of this revolutionary material in next-generation technologies.

As performance requirements grow more demanding—in electric vehicles, energy storage systems, and high-voltage conversion—synthetic diamond has emerged as a leading candidate for high-efficiency, high-reliability electronic devices.

But here’s the challenge: even the smallest defect during diamond growth can compromise performance. That’s why structural integrity must be verified at the micrometer or nanometer scale.

With optical interferometry, manufacturers can:

Capture the finest surface details
Measure high aspect ratios and steep slopes
Minimize measurement errors in complex geometries

This is where Sensofar’s 3D optical metrology systems play a crucial role.

Documents and Files

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Semiconductor Manufacturing – End-to-End Metrology Strategies for QC	7.76 MB

From Crystal to Circuit: Bridging Synthetic Diamond with Semiconductor Manufacturing

The connection between synthetic diamond and semiconductor manufacturing is natural and increasingly vital. As highlighted in Sensofar’s white paper “Semiconductor Manufacturing – End-to-End Metrology Strategies for QC,” modern semiconductor processes rely on:

Ultra-flat, defect-free substrates
Non-contact surface inspection at nanometric resolution
Tight process control over advanced materials

These are exactly the same challenges faced when working with synthetic diamond.

In fact, Sensofar’s Coherence Scanning Interferometry (CSI) technology is already used to:

Monitor diamond growth morphology
Assess surface flatness and roughness at the nanometer scale
Verify uniformity of diamond substrates before integration into chips

The tools that have revolutionized silicon wafer metrology—S neox, S mart 2, and SensoPRO—are now proving equally effective with diamond, SiC, GaN, and other third-generation semiconductors.