Hi’Res-C

High Resolution silicon probes

The Hi’Res-C probes suffer less contamination than silicon probes and are capable of obtaining many high-resolution scans, although they do require special care in use. Due to the small tip curvature radius, the tip-sample attraction force is minimized.

Advantages of Hi’Res-C are noticeable when scanning small areas (< 250 nm) and flat samples (Ra < 20 nm). On larger images, the resolution is similar to that of General Purpose probes.

Technical Features

Spike radius ................................... < 1 nm
Spike height ...................................100 - 200 nm
Spike material ...................................diamond-like

Overall coating:
Au overall coating ...................................30 nm
Cr overall sublayer ...................................20 nm

Cantilever SeriesCoatingsLength l, ± 5 μmWidth w, ± 3 μmThickness ± 0.5 μmFreq. Rison. kHz TypicalFreq. Rison. kHz RangeConst. Force N/m TypicalConst. Force N/m Range
Hi’Res-C14/Cr-Au125252.1160110-2205.01.8-13
Hi’Res-C15/Cr-Au125304.0325265-4104020-80
Hi’Res-C19/Cr-Au12522.51.06525-1200.50.05-2.3
Hi’Res-C18/Cr-Au22527.53.07560-902,81.2-5.5