Hi’Res-C

High Resolution silicon probes

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Hi'Res C - High Resolution silicon probes

The Hi’Res-C probes suffer less contamination than silicon probes and are capable of obtaining many high-resolution scans, although they do require special care in use. Due to the small tip curvature radius, the tip-sample attraction force is minimized.

Advantages of Hi’Res-C are noticeable when scanning small areas (< 250 nm) and flat samples (Ra < 20 nm). On larger images, the resolution is similar to that of General Purpose probes.

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Technical Features

Spike radius ................................... < 1 nm
Spike height ...................................100 - 200 nm
Spike material ...................................diamond-like

Overall coating:
Au overall coating ...................................30 nm
Cr overall sublayer ...................................20 nm


Cantilever Series	Coatings	Length l, ± 5 μm	Width w, ± 3 μm	Thickness ± 0.5 μm	Freq. Rison. kHz Typical	Freq. Rison. kHz Range	Const. Force N/m Typical	Const. Force N/m Range
Hi’Res-C14	/Cr-Au	125	25	2.1	160	110-220	5.0	1.8-13
Hi’Res-C15	/Cr-Au	125	30	4.0	325	265-410	40	20-80
Hi’Res-C19	/Cr-Au	125	22.5	1.0	65	25-120	0.5	0.05-2.3
Hi’Res-C18	/Cr-Au	225	27.5	3.0	75	60-90	2,8	1.2-5.5

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Hi’Res-C

Technical Features