In the field of microelectronics, metal-oxide-semiconductor field effect transistor (MOSFET) devices use high-k gate dielectric materials, such as hafnium dioxide (HfO₂) with a dielectric constant in the range of 18-25. This material, under a metal gate, insulates silicon from the metal and reduces gate leakage. It can be time-consuming to determine the electrical properties of HfO₂ deposited by thin film techniques such as Atomic Layer Deposition (ALD). Device fabrication is needed to detect the leakage current and breakdown voltage of thin HfO₂ layers, which can be a bottleneck for progress. The Atomic Force Microscope (AFM) is a probe-based characterization instrument that can provide information about the morphology, mechanical and electrical properties of samples. Jupiter XR large-sample AFM can accommodate samples ≤ 200 mm in diameter, providing high resolution, high quality data, at high imaging speeds. For electrical measurements, the nanoscale time-dependent dielectric breakdown (nanoTDDB) accessory has been used to evaluate the properties of HfO₂ films prepared by ALD.
Dr Agnieszka Kurek has a PhD in Chemistry from Carleton University where her studies focused on precursor synthesis and process development for Atomic Layer Deposition (ALD). Agnieszka has been with Oxford Instruments Plasma Technology for over six years working on Application-based ALD process development. She is now leads applications engineers over a broad range of plasma deposition technologies including ALD, ICPCVD, PECVD, and Ion beam deposition.
Marta Kocun has a PhD in Biophysics from University of Goettingen where her studies focused on investigating mechanical properties of membranes using the AFM. She has been with Oxford Instruments Asylum Research for over nine years, working on the development of AFM modes and, more recently, in the Product Marketing role for the Jupiter XR large sample AFM.
Asylum Research - "Semiconductor Dielectric Material Preparation and Characterization"
Online Webinar - Presentation
Wednesday 07 December 2022 - 17:00 to 18:00
Abstract
In the field of microelectronics, metal-oxide-semiconductor field effect transistor (MOSFET) devices use high-k gate dielectric materials, such as hafnium dioxide (HfO₂) with a dielectric constant in the range of 18-25. This material, under a metal gate, insulates silicon from the metal and reduces gate leakage. It can be time-consuming to determine the electrical properties of HfO₂ deposited by thin film techniques such as Atomic Layer Deposition (ALD). Device fabrication is needed to detect the leakage current and breakdown voltage of thin HfO₂ layers, which can be a bottleneck for progress. The Atomic Force Microscope (AFM) is a probe-based characterization instrument that can provide information about the morphology, mechanical and electrical properties of samples. Jupiter XR large-sample AFM can accommodate samples ≤ 200 mm in diameter, providing high resolution, high quality data, at high imaging speeds. For electrical measurements, the nanoscale time-dependent dielectric breakdown (nanoTDDB) accessory has been used to evaluate the properties of HfO₂ films prepared by ALD.
Learn more about nanoTDDB mode on Jupiter XR AFM: https://afm.oxinst.com/jupiter/nanoTDDB
Bios
Dr Agnieszka Kurek has a PhD in Chemistry from Carleton University where her studies focused on precursor synthesis and process development for Atomic Layer Deposition (ALD). Agnieszka has been with Oxford Instruments Plasma Technology for over six years working on Application-based ALD process development. She is now leads applications engineers over a broad range of plasma deposition technologies including ALD, ICPCVD, PECVD, and Ion beam deposition.
Marta Kocun has a PhD in Biophysics from University of Goettingen where her studies focused on investigating mechanical properties of membranes using the AFM. She has been with Oxford Instruments Asylum Research for over nine years, working on the development of AFM modes and, more recently, in the Product Marketing role for the Jupiter XR large sample AFM.
Related categories
AFM/SPM Microscopes